Silicon Carbide: Volume 1: Growth, Defects, And Novel Applications Peter Friedrichs

ISBN: 9783527409532

Published: December 1st 2009

Hardcover

506 pages


Description

Silicon Carbide: Volume 1: Growth, Defects, And Novel Applications  by  Peter Friedrichs

Silicon Carbide: Volume 1: Growth, Defects, And Novel Applications by Peter Friedrichs
December 1st 2009 | Hardcover | PDF, EPUB, FB2, DjVu, audiobook, mp3, ZIP | 506 pages | ISBN: 9783527409532 | 9.59 Mb

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon.The volume is devoted to the material and covers methodsMoreThis book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon.The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail.

The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches.Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles.The list of contributors reads like a Whos Who of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.



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